Experiments to determine generation lifetime and capture cross section of gold inn‐type silicon were performed using the non‐steady‐state linear voltage ramp technique. Measurements were carried out on MOS devices with different gold concentrations, obtained by various diffusion times of 10, 20, 40, and 100 min at 900 °C. It is found that in the temperature range 235–265 °K, the capture cross section is temperature dependent and has a value of the order of 1.0×10−15cm2.