We have investigated the lattice disorder produced in Si by 200‐keV B implantations using the standard channeling technique. We found the disorder production strongly temperature‐dependent from about −85°C to room temperature. The annealing of the residual disorder present after such a B implantation takes place at higher temperatures. Our results indicate that the nature of the lattice disorder produced in Si by low dose ion implantation depends on the mass of the ion implanted.