Behavior of spontaneous emission across threshold in GaAs junction lasers
作者:
J.E. Ripper,
Navin B. Patel,
P. Brosson,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 21,
issue 3
页码: 98-100
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654306
出版商: AIP
数据来源: AIP
摘要:
The spontaneous emission behavior of a cw stripe‐geometry GaAs laser is examined in detail. Contrary to recently published results, a sharp discontinuity of the spontaneous emission growth occurs when the laser reaches threshold. Above threshold, slow increases in the spontaneous emission are observed, coming mostly from the regions where the lasing light intensity is small. Other discontinuity points were, at higher currents, observed corresponding to the onset of higher‐order modes and second‐order mode locking.
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