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Behavior of spontaneous emission across threshold in GaAs junction lasers

 

作者: J.E. Ripper,   Navin B. Patel,   P. Brosson,  

 

期刊: Applied Physics Letters  (AIP Available online 1972)
卷期: Volume 21, issue 3  

页码: 98-100

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654306

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The spontaneous emission behavior of a cw stripe‐geometry GaAs laser is examined in detail. Contrary to recently published results, a sharp discontinuity of the spontaneous emission growth occurs when the laser reaches threshold. Above threshold, slow increases in the spontaneous emission are observed, coming mostly from the regions where the lasing light intensity is small. Other discontinuity points were, at higher currents, observed corresponding to the onset of higher‐order modes and second‐order mode locking.

 

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