RESISTIVITY OF rf SPUTTER‐THINNED ALUMINUM FILMS
作者:
A. F. Mayadas,
R. T. C. Tsui,
R. Rosenberg,
期刊:
Applied Physics Letters
(AIP Available online 1969)
卷期:
Volume 14,
issue 2
页码: 74-76
ISSN:0003-6951
年代: 1969
DOI:10.1063/1.1652719
出版商: AIP
数据来源: AIP
摘要:
It is shown that relatively thick (10 000‐Å) films of aluminum thinned by sputter‐etching exhibit an increase in both the room‐temperature and helium‐temperature resistivities, and that this increase is too large to be explained in terms of the Fuchs (thickness) size effect or by changes in the specular scattering probabilityp. A part of the increase in the helium‐temperature resistivity anneals out after 2 h at 250°C but a large increment remains. It is suggested that topographic and structural changes in the films may be responsible.
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