Epitaxial growth of a semiconductor film from solid solution by dissolution and transport of an evaporated semiconductor layer through a metal film has been demonstrated. A Ge growth layer of 4800 Å has been obtained by heating the system bulk‐Ge/Al/evaporated‐Ge at 300 °C. Electrical measurements indicate that the layers are heavily dopedptype. A silicon growth of 2000 Å has been obtained by heating the system bulk‐Si/Pd/evaporated‐Si at 600 °C. Channeling measurements show that the Ge and Si layers are well ordered and epitaxial with the underlying substrate.