High‐efficiency GaP pure green light‐emitting diodes of 555 nm fabricated by new liquid phase epitaxy method
作者:
Toshiharu Kawabata,
Susumu Koike,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 5
页码: 490-491
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94362
出版商: AIP
数据来源: AIP
摘要:
A new liquid phase epitaxy (LPE) method, which can control impurity concentration by volatilization of impurities from the growth solution under reduced pressure, has been developed. Using this LPE method, high‐efficiency GaP pure green light‐emitting diodes, of which the peak wavelength is 555 nm, has been obtained. The average efficiency for a epoxy‐encapsulated diode is 0.1% and the maximum efficiency is 0.14% at 16 A/cm2.
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