Low‐resistivity ZnxCd1−xS films have been obtained by a multisource evaporation method. The films have been doped with In during the deposition. The resistivity of such films varies from 2×10−3&OHgr; cm forx=0 up to 2 &OHgr; cm forx=0.3 and rises up to 1012&OHgr; cm forx=1. For energies lower than the energy gap, the transparency of these films, when corrected for the reflection loss, can reach a value of almost 100%. In the range of anxvariation between 0 and 0.4 these films, because of their low resistivity and their high transparency, can be used as windows in heterojunction solar cells.