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Proton and deuteron bombarded Ga0.47In0.53As

 

作者: K. Steeples,   G. Dearnaley,   A. E. R. E. Harwell,   I. J. Saunders,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 8  

页码: 703-705

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94031

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Large increases in resitivity of Ga0.47In0.53As have been observed due to bombardment with hydrogen ion isotopes. After damage factors due to mass and dose of the implanted isotopes have been taken into account, the high resistivity values of proton and deutron bombarded Ga0.47In0.53As agree,k contrasting with previous observations in GaAs. An explanation is offered.

 

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