Ina‐Si:H photoluminescence (PL) has been measured as a function of the energy of excitation using excitation energies down to well below the optical gap. The relative quantum efficiency for PL at a specific energy increases as the excitation energy decreases. The results are interpreted in terms of a phonon assisted absorption mechanism. Ina‐Si1−xNx:H the PL spectrum and the fatigue of the PL have been measured at 300 K. The possibility that the defect states ina‐Si1−xNx:H possess a negative effective electron‐electron correlation energy is critically examined.