We describe a new technique, Reactive Plasma Beam Deposition, for growinga‐Silicon films at higher temperatures. The technique uses a reactive beam of H atoms and ions, produced using an Electron Cyclotron Resonance (ECR) plasma source, to decompose SiH4and deposit films and devices. We find that the quality of the films depends critically upon the flux of H radicals reaching the substrate. Control over this flux by allows us to grow high quality films even at temperatures of 400–450C. We find that these films are more stable than comparable quality films deposited by glow discharge at lower temperatures, presumably due to a better local microstructure created by higher growth temperatures. The films have very good electronic properties. We have also made preliminaryp‐i‐nsuperstrate devices in these materials. The quantum efficiency data indicate that the hole mu‐Tau products in these materials are quite good, 3–4×10−8cm2/sec.