New minority hole sinked photoconductive detector
作者:
C. Y. Chen,
Y. M. Pang,
A. Y. Cho,
P. A. Garbinski,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 12
页码: 1115-1117
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94246
出版商: AIP
数据来源: AIP
摘要:
We demonstrate a new photoconductive device called minority hole sinked photoconductive detector. This detector has a back gate electrode for removing slow minority holes, resulting in an improvement of the detector’s fall time from 1 ns to 450 ps down to 80 ps. This represents nearly an order of magnitude improvement in the gain‐bandwidth product. Furthermore, the back gate bias can reduce the noise power by 1 dB at 100 MHz and 0.25 dB at 800 MHz at 1.2‐MHz noise bandwidth.
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