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Interstitial Supersaturation And Climb Of Misfit Dislocations In Phosphorus‐Diffused Silicon

 

作者: H. Strunk,   U. Gösele,   B. O. Kolbesen,  

 

期刊: Journal of Microscopy  （WILEY Available online 1980）
卷期: Volume 118, issue 1  

页码: 35-39

 

ISSN:0022-2720

 

年代: 1980

 

DOI:10.1111/j.1365-2818.1980.tb00243.x

 

出版商: Blackwell Publishing Ltd

 

数据来源: WILEY

 

摘要:

SUMMARYBipolar transistors showing the‘emitter‐push effect’ have been investigated by transmission electron microscopy. From the analysis of isolated dislocation helices in the boron base and the phosphorus emitter it is concluded that the diffusion of phosphorus into silicon is coupled with a supersaturation of silicon self‐interstitials. A new generation mechanism for this supersaturation is su

 

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