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Bifurcation of deep levels in metastable (GaAs)1−xGe2xalloys

 

作者: Kathie E. Newman,   John D. Dow,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 12  

页码: 1033-1035

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.93832

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Deep impurity levels in metastable (GaAs)1−xGe2xalloys are predicted to bifurcate as functions ofxat the alloy order‐disorder transition composition.

 

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