首页   按字顺浏览 期刊浏览 卷期浏览 LASER EMISSION FROM METAL‐SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2Te
LASER EMISSION FROM METAL‐SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2Te

 

作者: K. W. Nill,   A. R. Calawa,   T. C. Harman,   J. N. Walpole,  

 

期刊: Applied Physics Letters  (AIP Available online 1970)
卷期: Volume 16, issue 10  

页码: 375-377

 

ISSN:0003-6951

 

年代: 1970

 

DOI:10.1063/1.1653031

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Laser emission is obtained from forward biased evaporated metal barriers on degeneratep‐PbTe andp‐Pb0.8Sn0.2Te atT=4.2°K. Metals with small work functions such as In, Pb, and Zn produce a degenerate invertedn‐type surface region onp‐type samples without chemical doping. Low‐threshold laser emission has been obtained from these barriers onp‐PbTe at &lgr; = 6.4&mgr; and from Pb barriers onp‐Pb0.8Sn0.2Te at &lgr; = 15&mgr;.

 

点击下载:  PDF (206KB)



返 回