LASER EMISSION FROM METAL‐SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2Te
作者:
K. W. Nill,
A. R. Calawa,
T. C. Harman,
J. N. Walpole,
期刊:
Applied Physics Letters
(AIP Available online 1970)
卷期:
Volume 16,
issue 10
页码: 375-377
ISSN:0003-6951
年代: 1970
DOI:10.1063/1.1653031
出版商: AIP
数据来源: AIP
摘要:
Laser emission is obtained from forward biased evaporated metal barriers on degeneratep‐PbTe andp‐Pb0.8Sn0.2Te atT=4.2°K. Metals with small work functions such as In, Pb, and Zn produce a degenerate invertedn‐type surface region onp‐type samples without chemical doping. Low‐threshold laser emission has been obtained from these barriers onp‐PbTe at &lgr; = 6.4&mgr; and from Pb barriers onp‐Pb0.8Sn0.2Te at &lgr; = 15&mgr;.
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