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Increasing the effective height of a Schottky barrier using low‐energy ion implantation

 

作者: J. M. Shannon,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 25, issue 1  

页码: 75-77

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655287

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The presence of a shallown‐type surface layer on ap‐type substrate is shown to increase the effective height of a Schottky barrier top‐type material. The effective barrier height of Ni&sngbnd;Si diodes has been increased by an amount in the range 0–0.25 eV using surface layers formed by low‐energy antimony implantation.

 

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