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Liquid‐phase epitaxial growth of lattice‐matched InGaAsP on (100)‐InP for the 1.15–1.31‐&mgr;m spectral region

 

作者: M. Feng,   T. H. Windhorn,   M. M. Tashima,   G. E. Stillman,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 11  

页码: 758-761

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.89920

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The distribution coefficients for the growth of lattice‐matched InGaAsP on (100) ‐InP substrates in the 1.15–1.31‐&mgr;m spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 &mgr;m.

 

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