High-voltage high-frequency power-switching transistor module with switching-aid-circuit energy recovery
作者:
B.W.Williams,
期刊:
IEE Proceedings B (Electric Power Applications)
(IET Available online 1984)
卷期:
Volume 131,
issue 1
页码: 7-12
年代: 1984
DOI:10.1049/ip-b.1984.0002
出版商: IEE
数据来源: IET
摘要:
Optimal base-drive requirements for the high-voltage power switching transistor are given. These requirements are used to minimise switching stresses and the amount of switching-aid circuit energy to be recovered. A passive resonant recovery technique is analysed and employed to transfer stored switching-aid circuit energy into the load. Experimental results for a 600 V, 100 A, 100 kHz Darlington switching module incorporating 95% efficient switching-aid circuit energy recovery are presented.
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