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High-voltage high-frequency power-switching transistor module with switching-aid-circuit energy recovery

 

作者: B.W.Williams,  

 

期刊: IEE Proceedings B (Electric Power Applications)  (IET Available online 1984)
卷期: Volume 131, issue 1  

页码: 7-12

 

年代: 1984

 

DOI:10.1049/ip-b.1984.0002

 

出版商: IEE

 

数据来源: IET

 

摘要:

Optimal base-drive requirements for the high-voltage power switching transistor are given. These requirements are used to minimise switching stresses and the amount of switching-aid circuit energy to be recovered. A passive resonant recovery technique is analysed and employed to transfer stored switching-aid circuit energy into the load. Experimental results for a 600 V, 100 A, 100 kHz Darlington switching module incorporating 95% efficient switching-aid circuit energy recovery are presented.

 

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