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Direct observation of the saturation behavior of spontaneous emission in semiconductor lasers

 

作者: M. Nakamura,   K. Aiki,   J. Umeda,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 32, issue 5  

页码: 322-323

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90036

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The saturation behavior of the spontaneous emission intensity from a transverse‐mode stabilized (GaAl)As laser is studied. The spatial hole burning is observed from the top surface of the laser, and a complete gain saturation is confirmed to occur in the lasing region.

 

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