Electroabsorption avalanche photodiodes
作者:
G. E. Stillman,
C. M. Wolfe,
J. A. Rossi,
J. P. Donnelly,
期刊:
Applied Physics Letters
(AIP Available online 1974)
卷期:
Volume 25,
issue 11
页码: 671-673
ISSN:0003-6951
年代: 1974
DOI:10.1063/1.1655355
出版商: AIP
数据来源: AIP
摘要:
Schottky barrier avalanche photodiodes have been fabricated onn‐type high‐purity epitaxial GaAs. These devices have their largest response at wavelengths beyond the usual absorption edge for high‐purity materials. The absorption mechanism involves the Franz‐Keldysh shift of the absorption edge, and the higher response at the longer wavelengths can be explained by a much higher ionization coefficient for holes than for electrons. The results indicate that the ratio of &bgr;pto &agr;nis even larger than previous measurements have given.
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