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Heteroepitaxy of deposited amorphous layer by pulsed electron‐beam irradiation

 

作者: S. S. Lau,   W. F. Tseng,   M‐A. Nicolet,   J. W. Mayer,   J. A. Minnucci,   A. R. Kirkpatrick,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 3  

页码: 235-237

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90310

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either ⟨100⟩ or ⟨111⟩ Si single‐crystal substrate. The primary defects observed in the ⟨100⟩ case were dislocations, whereas stacking faults were observed in ⟨111⟩ samples.

 

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