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Position of the Band Edges of Silicon under Uniaxial Stress

 

作者: P. Kramer,   L. J. van Ruyven,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 20, issue 11  

页码: 420-422

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654000

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Schottky barrier heights of metal‐silicon contacts have been measured as a function of temperature at high uniaxial ⟨111⟩ stress (100 kbar). The change in band gap, as compared to the zero‐pressure band gap, can be attributed to a change in position of the conduction band edge alone, i.e., a change in electron affinity.

 

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