We have investigated the characteristics of flame annealing of ion implantation damage in (100) and (111) silicon substrates using transmission electron microscopy and Van der Pauw measurements. The temperature of the hydrogen flame ranged from 1050 to 1200 °C and the interaction time from 5 to 10 s. Transmission electron microscopy studies showed that a ‘‘defect‐free’’ annealing could be achieved with concomitant full electrical activation of dopants. The Hall mobility of flame annealed specimens was found to be comparable to pulsed laser annealed specimens.