We describe a method of controlling the in‐plane ⟨100⟩ directions of grains in (100)‐textured silicon films produced by zone‐melting recrystallization over amorphous SiO2. Grains having in‐plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported.