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Differential Negative Resistance ofn‐Type Inversion Layer in Silicon MOS Field‐Effect Transistor

 

作者: Y. Katayama,   I. Yoshida,   N. Kotera,   K. F. Komatsubara,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 20, issue 1  

页码: 31-33

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1653968

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new type of voltage‐controlled differential‐negative‐resistance effect was observed in ann‐type surface inversion layer of a silicon MOS field‐effect transistor with a very high mobility of 104cm2/V sec at low temperatures.

 

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