Annealing behavior of phosphorus‐implanted silicon layers underQ‐switched Nd3+‐YAG laser irradiation was examined for samples with various dose (1014−1016cm−2). Annealing efficiency in the implanted layer was found to be strongly influenced by the degree of damage to the substrate, namely, the annealing effect was localized to the amorphous regions. This selective annealing of the amorphous region was explained by the difference in the absorption coefficient of laser energy between crystalline and amorphous silicon.