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Position of the degradation and the improved structure for the buried crescent InGaAsP/InP (1.3 &mgr;m) lasers

 

作者: R. Hirano,   E. Oomura,   H. Higuchi,   Y. Sakakibara,   H. Namizaki,   W. Susaki,   K. Fujikawa,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 43, issue 2  

页码: 187-189

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.94275

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have found a degradation of the buried crescent (BC) InGaAsP/InP lasers that occurs when thep‐njunction plane coincides with the surface exposed in the high‐temperature H2ambient before the melt contact during the liquid phase epitaxial growth. To eliminate the degradation, we have fabricated a new structure of the BC laser and have obtained stable cw operation at 80 °C.

 

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