Dopant tracing of terrace growth in GaAs LPE layers
作者:
B. Fischer,
E. Bauser,
P. A. Sullivan,
D. L. Rode,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 1
页码: 78-80
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90152
出版商: AIP
数据来源: AIP
摘要:
Growth terraces on the surface of GaAs liquid phase epitaxial layers leave behind traces of increased doping concentration in the interior of the layer. These traces have been observed on (110) cleavage planes perpendicular to the (100) surface. Spatially resolved photoluminescence, cathodoluminescence, and photoetching have been applied to reveal the traces of the terraces. A fine structure on the photoetched cleavage plane indicates that the increase of thickness of the layer is caused in part by lateral growth of fine terraces traveling across the treads of the high terraces.
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