(100) Ge‐GaAs superlattices grown by molecular beam epitaxy have been analyzed using He+ion channeling spectrometry. Over the individual layer thickness of 25–100 A˚ for Ge and GaAs in the superlattices, very low dechanneling yields are observed along the ⟨110⟩ axis. Dechanneling yields along the [100] growth direction, however, are low only for the thicker layer structure, and become increasingly larger than the ⟨110⟩ ones for the thinner layer structures. These results are opposite to the ones for the InAs‐GaSb superlattices where dechanneling yields along the ⟨110⟩ axis are much higher than the [100] ones for all the superlattices studied. The channeling results are compared with those using other techniques and their implications on the Ge‐GaAs interfaces discussed.