Annealing of ion-implanted Ga0.47In0.53As
作者:
M.A. Shahid,
M. Anjum,
B.J. Sealy,
期刊:
Radiation Effects
(Taylor Available online 1984)
卷期:
Volume 86,
issue 2-3
页码: 87-91
ISSN:0033-7579
年代: 1984
DOI:10.1080/01422448408205218
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
We have investigated annealing of ion-implanted GaInAs using transmission electron microscopy. We have found that the best condition for the post-implantation anneals for GalnAs is a 30 second anneal at a temperature of 700–800°C. This produces a material similar in character to the untreated GaInAs. Anneals for longer than 30 seconds produce crystal defects becoming increasingly complex with time for similar temperatures.
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