Gettering of surface and bulk impurities in Czochralski silicon wafers
作者:
G. A. Rozgonyi,
C. W. Pearce,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 32,
issue 11
页码: 747-749
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.89908
出版商: AIP
数据来源: AIP
摘要:
The ability of SiO2precipitates to act as a source of process‐induced defects which can either beneficially getter unwanted impurities, or deleteriously interact with surface devices, has led to some confusion in interpreting the role of wafer oxygen content in device processing. This report presents a composite model which explains the many variables involved in oxygen precipitation and gettering phenomena.
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