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Hydrogenation of evaporated amorphous silicon films by plasma treatment

 

作者: D. Kaplan,   N. Sol,   G. Velasco,   P. A. Thomas,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 5  

页码: 440-442

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90370

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is shown that heat treatment in a hydrogen plasma of pure amorphous silicon films prepared by UHV evaporation yields a material with no observable dangling bond ESR signal. This material has electrical properties similar to films prepared by a glow‐discharge decomposition of silane but a lower hydrogen content as deduced from ir absorption data.

 

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