The Growth of a GaAs–GaAlAs Superlattice
作者:
L. L. Chang,
L. Esaki,
W. E. Howard,
R. Ludeke,
期刊:
Journal of Vacuum Science and Technology
(AIP Available online 1973)
卷期:
Volume 10,
issue 1
页码: 11-16
ISSN:0022-5355
年代: 1973
DOI:10.1116/1.1317919
出版商: American Vacuum Society
数据来源: AIP
摘要:
An ultra high vacuum epitaxy system is described, including special features such as computer control. The system is capable of preparing sophisticated structures requiring a high degree of precise control. GaAlAs films have been grown and evaluated by various techniques; He-ion backscattering and Raman spectroscopy have been shown to be particularly valuable for periodic structures. A structure with a very narrow period has been made, and its transport properties measured and interpreted by the superlattice mechanism.
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