In this paper, a video display system for direct imaging of transmission and reflection x‐ray topographs of Si and GaAs wafers is described. This system allows instantaneous viewing of x‐ray topographs with fields of view on the order of 2 cm by 1 cm. The resolution of the system is now limited by the sensitivity of the x‐ray phosphor to about 30 &mgr;. Slip bands and diffused devices have been directly observed in both Si and GaAs, as have been accidentally induced damage such as scratches and wafer warpage. Also, Laue patterns for orientation of wafers and ingots can be directly viewed, eliminating the time consuming method of film techniques.