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Domain growth in quenched random impurities

 

作者: Hisao Hayakawa,   Toshiya Iwai,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1992）
卷期: Volume 256, issue 1  

页码: 569-570

 

ISSN:0094-243X

 

年代: 1992

 

DOI:10.1063/1.42396

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Domain growth in a system with quenched random impurities for the conserved scalar order parameter is investigated using a cell‐dynamics method. We find that the growth rate of domains are reduced due to the pinning by impurities.

 

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