The high field (>30 kV/cm) electron drift velocity inn‐type (100) InP has been measured at temperatures from 95 to 400 K and electric field strengths up to 215 kV/cm using a fixed frequency (7.54 GHz) microwave time‐of‐flight technique. The velocity decreases monotonically with increasing electric field strength at all temperatures over the entire range of field strengths investigated. At 300 K the electron drift velocity in InP is 1.2 times the velocity in GaAs at 150 kV/cm, and increases to 1.34 times the velocity in GaAs when the field is lowered to 30 kV/cm.