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Semiconductor device developments in the 1960s

 

作者: A.A.Shepherd,  

 

期刊: Radio and Electronic Engineer  (IET Available online 1973)
卷期: Volume 43, issue 1-2  

页码: 11-20

 

年代: 1973

 

DOI:10.1049/ree.1973.0005

 

出版商: IERE

 

数据来源: IET

 

摘要:

This paper illustrates the progress of semiconductor device development during the 1960s by reference to various families of active devices (excluding opto-devices).The reasons for the change during that period from germanium to silicon technology are discussed, and the enormous influence of the silicon planar technique on device design and manufacturing methods is shown. The increasing role of the silicon integrated circuit is described, and the reasons why the integrated circuit, both bipolar and m.o.s. will continue to form the basis of future equipment design are explained.

 

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