Specific site location of S and Si in ion‐implanted GaAs
作者:
R. S. Bhattacharya,
P. P. Pronko,
S. C. Ling,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 10
页码: 880-882
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93773
出版商: AIP
数据来源: AIP
摘要:
Rutherford backscattering and proton induced x‐ray emission in combination with channeling have been used to investigate the specific site location of S and Si implanted in GaAs through the asymmetry in their channeling dips. A pronounced asymmetry is observed for 〈110〉 scans parallel to the {11¯0} plane in the case of S, whereas no such asymmetry is found for the case of Si. These results clearly indicate that S predominantly occupies one sublattice site which is shown to be the As site whereas Si occupies both Ga and As sites in about equal concentrations.
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