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A new dielectric facet reflector for semiconductor lasers

 

作者: Michael Ettenberg,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 32, issue 11  

页码: 724-725

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.89899

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Described in this letter is a new dielectric reflector designed for injection laser facets which consists of alternating quarter‐wavelength layers of Al2O3and Si. The reflectivity for six layers can be made ≳0.98 over a wavelength range from ∼0.7 to ≳2 &mgr;m. By choosing the appropriate number of quarter‐wavelength layers and the final layer thickness the reflectivity can be varied between 0.01 and 0.98. Finally, both Si and Al2O3are impervious to the chemical cleaning and wetting agents and solders used during the mounting of (AlGa)As cw injection lasers.

 

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