This research activity attempts to develop an ultra‐thin capacitor using TiO2as a dielectric film for high‐temperature microelectronics in commerical or military applications. There has been an increasing demand for a high dielectric constant insulator for the replacement of SiO2. TiO2film is promising because it has a high dielectric constant with a sufficiently high breakdown voltage. In spite of continuous efforts toward diamond and SiC film for capacitor applications, it has been difficult to provide sufficient reliability toward LSI fabrication due to recrystallization of the dielectric film which results in a reduction of dielectric breakdown strength. Defect density of the dielectric film significantly increases as the thickness of the film is reduced to sevevral hundred angstroms. Application of the ultra‐thin capacitor to a switch‐load resistor memory cell makes it possible to reduce the memory cell area to one‐third that of a conventional memory cell. Techniques, such as thermal oxidation of sputtered titanium and evaporation of Ti3O5are used to generate TiO2thin film. The quality of the film, electrical properties such as breakdown voltage, dissipation factor, and equivalent series resistance have been evaluated. The prototypical, ultra‐thin, TiO2capacitors are demonstrated. © 1995American Institute of Physics