The method of fabrication and measured characteristics of phosphorous ion-implanted resistors made on high-resistivity 15–20 Ω cm p-type silicon substrates are presented. The process included a shallow boron-implanted layer at the surface to prevent surface inversion due toQss. It is demonstrated that enhancement N-channel MOSFET devices can be processed together with the implanted resistors. The range of phosphorous doses studied was1×1012–5×1014/cm2and the range of anneal temperatures considered was 500–950 °C. Results are given for measurements of sheet resistivity vs dose and anneal temperature, and for temperature coefficient of resistance. The advantages of using high-resistivity substrates for the implanted resistors are discussed.