HIGH‐EFFICIENCY RED‐EMITTING GaP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION‐GROWN (&eegr;≃6%) AND CZOCHRALSKI (&eegr;≃2%) SUBSTRATES
作者:
W. H. Hackett,
R. H. Saul,
H. W. Verleur,
S. J. Bass,
期刊:
Applied Physics Letters
(AIP Available online 1970)
卷期:
Volume 16,
issue 12
页码: 477-479
ISSN:0003-6951
年代: 1970
DOI:10.1063/1.1653072
出版商: AIP
数据来源: AIP
摘要:
High external quantum efficiencies have been obtained for GaP red‐emitting diodes fabricated by a single liquid‐phase epitaxy, in which Zn, O‐dopedp‐type layers were grown directly on Te‐dopedn‐type solution‐grown (SG) and liquid‐encapsulated Czochralski (LEC) substrates. For SG single‐epitaxy diodes, the quantum efficiencies (&eegr;≃6%) and the other electrical and electroluminescent characteristics are nearly identical to those observed in the previously reported double‐epitaxy diodes, demonstrating that the double‐epitaxy structure is not essential for high efficiencies. For LEC single‐epitaxy diodes, the quantum efficiencies (&eegr;≃2%) establish for the first time the present utility and future potential of LEC crystals in fabricating efficient diodes by single epitaxy.
点击下载:
PDF
(215KB)
返 回