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Doped amorphous silicon and its application in photovoltaic devices

 

作者: R.A.Gibson,   P.G.le Comber,   W.E.Spear,  

 

期刊: IEE Journal on Solid-State and Electron Devices  （IET Available online 1978）
卷期: Volume 2, issue 3S  

页码: 3-6

 

年代: 1978

 

DOI:10.1049/ij-ssed.1978.0019

 

出版商: IEE

 

数据来源: IET

 

摘要:

The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.

 

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