Compatible VVMOS and NMOS technology for power MOS ICs
作者:
W.A.Lane,
C.A.T.Salama,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1981)
卷期:
Volume 128,
issue 3
页码: 87-91
年代: 1981
DOI:10.1049/ip-i-1.1981.0026
出版商: IEE
数据来源: IET
摘要:
The paper describes a technology for simultaneously realising both power VVMOSTs and small signal planar NMOS devices, that together can form a power MOS IC. Device and circuit constraints are discussed and experimental results from a test IC are presented. A fully developed process, based on such a concept, could find application in such circuits as switching regulators and amplifiers.
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