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Range and range straggling of 15 to 350 keV 69Ga in amorphous silicon

 

作者: M. Behar,   J.P. Biersack,   P.F. P. Fichtner,   D. Fink,   C.V. De B. Leite Filho,   C.A. Olivieri,   B.K. Patnaik,   J.P. De Souza,   F.C. Zawislak,  

 

期刊: Radiation Effects  （Taylor Available online 1984）
卷期: Volume 85, issue 3  

页码: 117-122

 

ISSN:0033-7579

 

年代: 1984

 

DOI:10.1080/01422448408210073

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Depth distribution profiles of 15 to 350 keV69Ga+ implanted at room temperature in amorphized silicon have been measured by4He ion Rutherford backscattering. The measured projected ranges and range stragglings are in excellent agreement with the predictions calculated via realistic Monte Carlo simulations, TRIM code.

 

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