Schottky-barrier versus homojunction silicon solar cells: a status report
作者:
W.G.Townsend,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1978)
卷期:
Volume 2,
issue 3S
页码: 31-34
年代: 1978
DOI:10.1049/ij-ssed.1978.0012
出版商: IEE
数据来源: IET
摘要:
The present state of silicon Schottky-barrier solar cell (s.b.s.c.) development is reviewed and the relative advantages and disadvantages of this type of cell compared with the competing homojunction cell technology. Recent work on cast silicon substrates is considered, and the conclusion drawn that Schottky-barrier cells are not likely to compete unless a wholly thin-film s.b.s.c. can be developed based on the favourable absorption properties of amorphous silicon. A number of problems requiring solution before s.b.s.c. can compete in terms of reliability and low cost for both thick- and thin-film cells are discussed.
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