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Temperature dependence of the gold acceptor energy level in silicon

 

作者: O. Engstro¨m,   H. G. Grimmeiss,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 25, issue 7  

页码: 413-415

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655530

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Using the spectral distribution of the optical emission rates it is shown that the gold acceptor energy level in silicon is probably pinned to the conduction band in the temperature range between 90 and 242 K.

 

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