This paper describes an experiment relating to the diffusion of charge carriers in homogeneous semiconductor material. Diffusion theory, as outlined in this paper, is applied to deduce from measurements a quantity called the bulk lifetime of excess minority carriers: a quantity which is independent of the size, shape, and surface condition of the semiconductor sample. Because of this independence, the bulk lifetime is used as one of the characterizing quantities of semiconductor material. In performing this experiment, the student will gain a working knowledge of diffusion theory as applied to semiconductor carriers, and at the same time become acquainted with an important technique for the characterization of semiconductor material. The actual duration of involvement will depend upon the amount of setting up of equipment, sample preparation, etc., that is expected of the student. An oscilloscope of fast rise time (200–MHz bandwidth), and a xenon flash tube with pulse duration of a few microseconds (General Radio 1542‐B electronic stroboscope is a proven possibility), are the major items of equipment needed.