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Iron as a thermal defect in silicon

 

作者: E. Weber,   H. G. Riotte,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 33, issue 5  

页码: 433-435

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90412

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thermally treated silicon contains iron which can be frozen on interstitial sites by quenching. EPR, combined with neutron activation analysis of heat‐treated and as‐grown silicon, shows that the iron diffuses into the crystal from sources outside the specimen. It can be found mostly in theTdinterstitial site. The untreated floating‐zone silicon includes only 1013Fe/cm3.

 

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