Iron as a thermal defect in silicon
作者:
E. Weber,
H. G. Riotte,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 5
页码: 433-435
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90412
出版商: AIP
数据来源: AIP
摘要:
Thermally treated silicon contains iron which can be frozen on interstitial sites by quenching. EPR, combined with neutron activation analysis of heat‐treated and as‐grown silicon, shows that the iron diffuses into the crystal from sources outside the specimen. It can be found mostly in theTdinterstitial site. The untreated floating‐zone silicon includes only 1013Fe/cm3.
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