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INTERACTION BETWEEN B ATOMS AND DEFECTS PRODUCED BY Hg BOMBARDEMENT IN SILICON

 

作者: G. Della Mea,   A. V. Drigo,   P. Mazzoldi,   G. Nardelli,   R. Zannoni,  

 

期刊: Applied Physics Letters  （AIP Available online 1970）
卷期: Volume 16, issue 10  

页码: 382-383

 

ISSN:0003-6951

 

年代: 1970

 

DOI:10.1063/1.1653034

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The lattice disorder produced by 42‐keV Hg ions implanted in B‐doped Si at room temperature has been measured by means of the channeling and of the backscattering of 2‐MeV He ions. An annealing effect connected to B concentration is observed.

 

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