Pressure dependence of the deep level associated with oxygen inn‐GaAs
作者:
A. Zylbersztejn,
R. H. Wallis,
J. M. Besson,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 32,
issue 11
页码: 764-766
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.89887
出版商: AIP
数据来源: AIP
摘要:
Transient capacitance measurements have been performed on Schottky barriers onn‐GaAs containing the deep electron trap associated with oxygen, as a function of hydrostatic pressure. It is found that the oxygen level separates from the conduction band at a linear rate of 3.8±0.3 meV/kbar. From a comparison with published optical data we conclude that most of this variation comes from a pressure‐dependent Frank‐Condon shift and that the unoccupied level separates very little from the valence band.
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